Apparatus having a titanium alloy layer

摘要

Structures within semiconductor devices having a titanium alloy layer are provided. The titanium alloy layer is formed through chemical vapor deposition by combining a first precursor with a reducing agent to form a seed layer, and by combining a second precursor with the seed layer to form the titanium alloy layer. Structures are described having a titanium alloy layer on sidewalls and an exposed base layer of a contact hole. Structures are further described having a titanium alloy layer on sidewalls of a contact hole and a titanium silicide layer on an exposed base layer of the contact hole. The structures are useful as device contacts to active areas of a semiconductor device, and as interlevel vias within semiconductor integrated circuits.