Method of fabricating a SRAM device

摘要

The present invention comprises an improved method of forming the source voltage lines, connection lines, and high load resistors for use in HLR SRAM devices. The source voltage lines, connection lines, and high load resistors are formed from a single polysilicon film that is selectively silicided to produce the low resistance structures while preserving the as-deposited polysilicon resistivity for formation of the high load resistor. The improved resistance control allows reduced feature size and increased pattern density.