| 摘要 |
This invention provides a Group III-V compound semiconductor that is free from the limitation of the shape and the size, is economical, is excellent in photo-electric characteristics (photo-electric conductivity photo-electromotive current, photo-electromotive force, quantum efficiency), can freely select the optical gap over a broad range, has high performance as a photo-semiconductor, has limited change with time, and is excellent in response, environmental resistance characteristics and high temperature resistance. The Group III-V compound semiconductor contains a Group III element and a Group V element of the Periodic Table as principal components, and contains also 0.1 atom % to 40 atom % of hydrogen atoms and 100 ppm to 20 atom %, based on the sum of the atomic numbers of the Group III element and the Group V element, of at least one element selected from among Be, Mg, Ca, Zn and Sr.
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