发明名称 |
Silicon on insulator logic circuit utilizing diode switching elements |
摘要 |
A logic circuit is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The logic circuit utilizes both SOI field effect transistors (FETs) and SOI diodes to provide for reduced size of the logic circuit and reduced power consumption when the logic circuit is in operation. A method of performing certain logic function is also provided.
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申请公布号 |
US6433389(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US20000591117 |
申请日期 |
2000.06.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GIESEKE BRUCE ALAN |
分类号 |
H01L21/84;H01L27/12;H03K19/096;H03K19/12;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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