| 摘要 |
A plasma processing method includes evacuating a vacuum chamber while supplying a gas into the vacuum chamber, thereby controlling an interior of the vacuum chamber to a pressure, and supplying a high frequency power of a frequency of 50 MHz-3 GHz to an antenna which is set opposite to a substrate placed to a substrate electrode in the vacuum chamber and which has a structure with a dielectric member held between a wall face of the vacuum chamber opposite to the substrate and a metallic plate, thereby generating plasma inside the vacuum chamber and processing the substrate, wherein the high frequency power is supplied to satisfy a relation 3r<c/(f.∈½)<9r when c is a light velocity (m/sec), f is a frequency (Hz) of the high frequency power, ∈ is a relative permittivity of the dielectric member and, r is a half (m) of a longer line of a shape of the dielectric member.
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