| 摘要 |
A surface of a semiconductor wafer having a plurality of semiconductor elements thereon is laminated on a first wafer holding substrate. Subsequently, the whole rear surface of the semiconductor wafer is coated with a first conductive layer. Then a second conductive layer is selectively formed thereon. Then, a rear surface side glass substrate is laminated on the first and second conductive layer. Subsequently, the first wafer holding substrate is peeled off. Subsequently, the semiconductor wafer is selectively etched so as to be separated into semiconductor elements. Then, the first conductive layer is connected to a ground potential to measure electrical characteristics of the semiconductor elements and sort the semiconductor elements into non-defectives and defectives. Then, the first conductive layer is selectively etched so as to be separated into chips and thus semiconductor pellets are formed. Finally, the second wafer holding substrate is peeled off.
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