发明名称 |
Method and structure to reduce the damage associated with programming electrical fuses |
摘要 |
An improved fuse structure in an integrated circuit (IC) structure is made by forming a gate stack comprised of layers of polysilicon and a silicide. Subsequent to the formation of the silicide layer, an etch stop silicon nitride layer is deposited over the silicide layer. The silicon nitride layer is patterned to expose the silicide layer. A soft passivation layer is deposited over the exposed silicide layer. The soft passivation layer has a low thermal conductivity which confines energy in the silicide layer, minimizing the current needed to program the fuse. The inherent ductility of the soft passivation layer prevents the generation of cracks in the surrounding layers.
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申请公布号 |
US6432760(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US20000751475 |
申请日期 |
2000.12.28 |
申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KOTHANDARAMAN CHANDRASEKHARAN;STETTER MICHAEL;IYER SUNDAR K. |
分类号 |
H01L23/525;(IPC1-7):H01L21/823;H01L21/331 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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