| 摘要 |
A method for forming a photomask including applying photoresist to a semiconductor substrate, exposing a first area of the photoresist to a first dosage of radiation, and exposing a second area of the photoresist to a second dosage of radiation. The first and second areas may be concurrently exposed. First and second regions of the photoresist are then removed to form first and second openings that have different depths in the photoresist. Such removal may be effected by developing the first and second areas of the photoresist. One of the openings may extend down to an insulating layer formed on the semiconductor substrate. A contact and/or trench etch may be performed to remove. a portion of the insulating layer. Conductive material may then be deposited in the opening so formed to form a contact, a via, or another electrically conductive element that communicates with a structure underlying the insulating layer.
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