发明名称 Sample and hold voltage reference source
摘要 An apparatus and method are disclosed for providing a sample and hold voltage reference for non-volatile memory. According to one embodiment, the sample and hold voltage reference produces a reference voltage for a drain bias circuit of a memory cell.
申请公布号 US6434049(B1) 申请公布日期 2002.08.13
申请号 US20000753354 申请日期 2000.12.29
申请人 INTEL CORPORATION 发明人 TRIVEDI RITESH;BALTAR ROBERT;BAUER MARK;GULIANI SANDEEP;SRINIVASAN BALAJI
分类号 G11C16/28;G11C27/02;(IPC1-7):G11C16/06 主分类号 G11C16/28
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