发明名称 |
Sample and hold voltage reference source |
摘要 |
An apparatus and method are disclosed for providing a sample and hold voltage reference for non-volatile memory. According to one embodiment, the sample and hold voltage reference produces a reference voltage for a drain bias circuit of a memory cell.
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申请公布号 |
US6434049(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US20000753354 |
申请日期 |
2000.12.29 |
申请人 |
INTEL CORPORATION |
发明人 |
TRIVEDI RITESH;BALTAR ROBERT;BAUER MARK;GULIANI SANDEEP;SRINIVASAN BALAJI |
分类号 |
G11C16/28;G11C27/02;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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