METHOD FOR FORMING HALF TONE TYPE PHASE SHIFT MASK

摘要

PURPOSE: A method for forming a half tone type phase shift mask is provided to form fine patterns by using I-line equipment. CONSTITUTION: A PSM layer and a shielding layer are deposited on a quartz substrate(31) having a cell region and a peripheral region. The PSM layer is used for shifting a phase as much as 180 degrees. The PSM layer is formed with materials such as Cr, CrOx, and MoSi. The PSM layer of the cell region is exposed by removing the shielding layer from the cell region. A writing process and an etch process are performed on the exposed PSM layer and a shielding layer pattern(33a) and a PSM layer pattern(32a) are formed thereby. An exposure process is performed on the half tone type phase shift mask pattern.