发明名称 Method for improved passive thermal flow in silicon on insulator devices
摘要 Increased heat dissipation is provided in a high performance integrated circuit by providing a thermally conductive path from a thermal poly plug (TPP) which extends through a thermal barrier in the substrate, such as in insulator layer of a silicon-on-insulator layer, to a front surface of the chip simultaneously with formation of active device contacts through an insulator layer of said chip. A pad is formed in thermal contact with said thermally conductive path simultaneously and coplanar with wiring connections to active device contacts and a further thermally conductive path may be formed through wiring and/or further insulator layers to a pad for attachment of a passive heat sink or active cooling device coplanar with wire bond pads at a surface of the wiring and/or further insulator layers. Electrical connections to the wire bond pads are formed through optionally insulated apertures in the passive heat sink or active cooling device. Enhancements to heat transfer are provided by removing insulator at the bottom of the YPP and simultaneous formation with portions of active devices.
申请公布号 US6432809(B1) 申请公布日期 2002.08.13
申请号 US20000514396 申请日期 2000.02.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 TONTI WILLIAM R.;VOLDMAN STEVEN H.
分类号 H01L21/84;H01L27/12;(IPC1-7):H01L21/44;H01L21/476 主分类号 H01L21/84
代理机构 代理人
主权项
地址