| 摘要 |
Methods and apparatus are disclosed for performing charged-particle-beam projection exposure of selected exposure units of a pattern, defined by a reticle, without compromising throughput or transfer accuracy. An illumination beam sequentially illuminates individual exposure units (e.g., subfields) of the reticle pattern to form a patterned beam. The patterned beam sequentially projects images of the illuminated exposure units on a sensitive substrate (e.g., resist-coated wafer). The images are formed on the substrate so as to be stitched together in a manner that reproduces the entire pattern over a large field on the substrate. Exposure is controllably performed according to data concerning whether the illumination beam should be ON or OFF, according to data concerning exposure-dose values, and/or according to data concerning focal position for each respective exposure unit.
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