| 摘要 |
PURPOSE:To obtain an electrostatic breakdown preventing device effective to surges both positive and negative by adding an electrostatic breakdown preventing element consisting of a P-N five-layer structure in a semiconductor substrate whereon an integrated circuit is formed. CONSTITUTION:The electrostatic breakdown preventing element 50 is connected between the gate and the emitter of a transistor 60 in order to protect the input transistor 60 from both the surges positive and negative. This element 50 is adjacent to the input transistor 60, and formed by interposing an isolation region 33 therebetween. This element consists of the five layers of N-P-N-P-N and has the function of absorbing positive and negative surge voltages being impressed. |
