| 摘要 |
PURPOSE:To obtain a structure strong to the soft error due to alpha particles by writing the same information into two memory cells by making both the memory cells, wherein all of a write-readout line, a word line, and a reading line are put in common, correspond to one bit. CONSTITUTION:Since many holes exist in a charge accumulated region in the state of the memory of ''1'' information, the information is not destroyed even when the holes generated by the alpha particles flow into this region. On the other hand, the holes do not exist in the charge accumulated region in the state of the memory of ''0'' information, therefore it becmes possible that the information inverts to the ''1'' information when the holes generated by the alpha particles flow into this region. However, because of the mutual insulation of these two regions, at least one cell retains ''0'' information unless both the cells cause the soft error. Accordingly, even in the case of the inversion of one cell to the ''1'' information, the soft error can be prevented if a reference signal is so set as to discriminate the information as ''0'' one. |
