| 摘要 |
PURPOSE:To duplicate a mask pattern to a material to be etched by providing a mask adjacent to the material to be etched and irradiating said mask with ion beam under the active gas ambient which reacts with the material to be etched. CONSTITUTION:Parallel masks 32 for exposure by ion beam are provided in parallel adjacently each other on a substrate 31 to be etched and the Cl2 gas is introduced as the active gas 34. The entire part of mask 32 is irradiated with the H ion 33. Thereby, the material of substrate 31 reacts with the Cl2 gas and mask pattern is formed within the substrate 31. |
