| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element which can eliminate residual image and black saturation. SOLUTION: A light receiving diode 111 part has a one conductivity type impurity region 17 formed to extend from the surface layer of a first well region 15a of the opposite conductivity type to the surface layer of a one conductivity type region 12. An insulating gate type field effect transistor 112 part has one conductivity type source region 16a and drain region 17a formed on the surface layer of a second well region 15b of the opposite conductivity type, and a high concentration buried layer 25 of the opposite conductivity type formed in the second well region 15b in the vicinity of the source region 16a beneath a channel region. The first and second well regions 15a, 15b are connected and the connection region has a higher impurity concentration than the first and second well regions 15a, 15b.
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