发明名称 INJECTION-TYPE SEMICONDUCTOR LASER RADIATOR
摘要 laser engineering. SUBSTANCE: laser radiator has sealed envelope incorporating case with terminal leads and cover with glass that accommodates laser diode array mounted on case surface perpendicular to radiation axis. Laser diode array is assembled of similar laser diode units whose minimal quantity is found from equation , where &thetas;p - is standard divergence of laser diode unit radiation in plane parallel to p-n junctions with respect to level 0.5; &thetas;r- is radiator beam divergence with respect to desired level of radiation power; all in laser diode units are relatively arranged in place perpendicular to radiation axis. Angles between directions of their p-n junctions and direction of angle counting origin in mirror plane form 0,alpha,2alpha,...,(n-1)alpha deg. row, where alpha = 180.n-1 deg. All n laser diode units are disposed over circumference at angle pitch 2alpha relative to its center, circle diameter being minimal. Directivity pattern of distant radiation field of radiator is close to round-symmetrical one without using forming optics. EFFECT: reduced size, enhanced power, enlarged divergence of radiator in pulsed mode of operation. 2 cl, 2 dwg
申请公布号 RU2187183(C2) 申请公布日期 2002.08.10
申请号 RU20000119984 申请日期 2000.07.26
申请人 GOSUDARSTVENNOE UNITARNOE NAUCHNO-PROIZVODSTVENNOE 发明人 SURODIN M.P.;SOSNOVSKIJ S.A.
分类号 H01S5/32;H01S5/00;H01S5/40 主分类号 H01S5/32
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