METHOD FOR INSULATING COMPONENTS OF SEMICONDUCTOR DEVICES BY MEANS OF GROOVES

摘要

semiconductor engineering. SUBSTANCE: two types of oxide films are used for the purpose. Groove in semiconductor substrate is filled with multilayer film of two alternately applied oxide films having different stress characteristics. Composite oxide film filling the grooves is compacted. Then it is leveled off until upper surface of stencil layer is exposed. In this way groove filling layer is obtained. EFFECT: reduced stresses in vicinity of substrate insulation; enhanced degree of device integration. 17 cl, 7 dwg, 1 tbl