发明名称 PHASE SHIFT MASK AND PATTERN FORMING METHOD USING THE SAME
摘要 PURPOSE: To provide a Levenson type phase shift mask in which increase in the dimension of the formable minimum pattern element due to the proximity effect of light can be effectively suppressed. CONSTITUTION: A light-shielding part 22a to form an isolated pattern element and a plurality of light-shielding parts 22b to form a periodical pattern element are formed on a light-transmitting substrate 21. A phase shift part 23a and a light-transmitting part 24a are arranged in both sides of the light-shielding part 22a, and a phase shift part 23b and a light-transmitting part 24b are arranged in both sides of each light-shielding part 22b. The residual part of the light-transmitting substrate 21 is covered with a light-shielding part 22c. The width Wp1 of the phase shift part 23a is made almost equal to the width Wp2 of the phase shift part 23b.
申请公布号 KR20020064681(A) 申请公布日期 2002.08.09
申请号 KR20020006065 申请日期 2002.02.02
申请人 NEC ELECTRONICS CORPORATION 发明人 FUJIMOTO MASASHI
分类号 G03F1/08;G03F1/00;G03F1/30;G03F1/34;G03F1/36;G03F1/70;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F1/08
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