发明名称 |
PHASE SHIFT MASK AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
PURPOSE: To provide a Levenson type phase shift mask in which increase in the dimension of the formable minimum pattern element due to the proximity effect of light can be effectively suppressed. CONSTITUTION: A light-shielding part 22a to form an isolated pattern element and a plurality of light-shielding parts 22b to form a periodical pattern element are formed on a light-transmitting substrate 21. A phase shift part 23a and a light-transmitting part 24a are arranged in both sides of the light-shielding part 22a, and a phase shift part 23b and a light-transmitting part 24b are arranged in both sides of each light-shielding part 22b. The residual part of the light-transmitting substrate 21 is covered with a light-shielding part 22c. The width Wp1 of the phase shift part 23a is made almost equal to the width Wp2 of the phase shift part 23b. |
申请公布号 |
KR20020064681(A) |
申请公布日期 |
2002.08.09 |
申请号 |
KR20020006065 |
申请日期 |
2002.02.02 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
FUJIMOTO MASASHI |
分类号 |
G03F1/08;G03F1/00;G03F1/30;G03F1/34;G03F1/36;G03F1/70;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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