| 摘要 |
PROBLEM TO BE SOLVED: To improve production yield by preventing the wiring used for a peripheral circuit from peeling due to a liquid pressure at the time of a resist peeling processing by increasing the adhesion. SOLUTION: This semiconductor device is provided with a metal-base wiring (wiring 21 used for the peripheral circuit and bit wire 31) formed on a silicon oxide base insulation film (insulation film 12) formed by a film formation technique utilizing plasmas. The metal base wiring (wiring 21 used for the peripheral circuit) is provided with parts 23 where the wiring is thickened at prescribed intervals regardless of the positions of contacts. |
