DEVICE AND METHOD FOR PLASMA PROCESSING

摘要

PROBLEM TO BE SOLVED: To secure the selection ratio of a mask or/and a base material and to perform a highly accurate surface processing. SOLUTION: Plasma generation and the control of a bias voltage to a material are respectively independently performed. Also, a high frequency voltage waveform for the bias voltage is leveled at an optional voltage, it is applied to a substrate electrode 115 on which the material 116 is mounted and ion energy distribution made incident on the material is controlled as desired.