发明名称 PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce potential difference applied to the surface and backside of a substrate. SOLUTION: The plasma treatment device has a continuity means 45 for guiding a DC voltage that is generated at an ion sheath when plasma is excited to a first electrode 31 where a substrate W is placed. As a result, the DC voltage is applied to both surface and backsides of the substrate W, thus setting both the surfaces of the substrate to the same potential, thus preventing an element from being damaged due to the generation of large potential difference on both the surfaces of the substrate W.
申请公布号 JP2002222798(A) 申请公布日期 2002.08.09
申请号 JP20010016811 申请日期 2001.01.25
申请人 TOKYO ELECTRON LTD 发明人 KOSHIMIZU CHISHIO
分类号 H05H1/46;B01J19/08;C23C16/509;H01J37/32;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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