| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma treatment with good productivity, which easily attain uniform high-frequency discharge over a large area, and which can uniformly and rapidly treat a substrate having the large area, with plasma. SOLUTION: The apparatus and the method of the plasma treatment for forming a deposition film on the substrate to be film formed, which has the substrate to be film formed held by a base substance holding means in a reactive vessel which can be depressurized, feeds source gas for the plasma treatment into the reactive vessel, applies high frequency electric power from a same power supply to a cathode electrode by dividing the power through a matching circuit, and generates plasma between the cathode electrode and the above substrate which is a counter electrode of the cathode, comprises that a part of the above reactive vessel is composed of a dielectric member, that the above cathode is arranged outside the reactive vessel, and that the reactive vessel has a cooling mechanism with a structure of passing a cooling medium inside the wall. |
