| 发明名称 |
HIGH POLYMER COMPOUND, RESIST MATERIAL AND PATTERN- FORMING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high energy beams and excellent in the sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, especially 190 nm or less. SOLUTION: The high polymer compound comprises a recurring unit represented by the formula (I) [R1, R2 and R3 are H, F, an alkyl or a fluorinated alkyl; 0<d+e<5, 0<g+h<5; a and b are 0 or an integer, provided that they are not simultaneously 0] and a recurring unit in which a hydrogen atom in a hydroxyl group of a carboxylic acid is substituted with an acid labile group. |
| 申请公布号 |
JP2002220418(A) |
申请公布日期 |
2002.08.09 |
| 申请号 |
JP20010346870 |
申请日期 |
2001.11.13 |
| 申请人 |
SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD;CENTRAL GLASS CO LTD |
发明人 |
HATAKEYAMA JUN;HARADA YUJI;WATANABE ATSUSHI;KAWAI YOSHIO;SASAKO MASARU;ENDO MASATAKA;KISHIMURA SHINJI;OTANI MITSUTAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO |
| 分类号 |
G03F7/004;C08F212/14;C08F220/10;C08F222/40;G03F7/039;G03F7/38;H01L21/027 |
主分类号 |
G03F7/004 |
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