| 摘要 |
PROBLEM TO BE SOLVED: To provide a high power semiconductor laser device which is low-cost, whose yield is high and which emits light stably. SOLUTION: The semiconductor laser device is provided with a first- conductivity-type clad layer 102 formed on a substrate, an active layer 104; a first second-conductivity-type clad layer 106 whose refractive index is larger than that of the layer 102; a second type-conductivity-type clad layer 108 which is formed in a ridge shape; and current blocking layers 109 which are formed on both lateral sides of the layer 108, whose band gap is smaller than that of the layer 108, and which are composed of a first-conductivity-type semiconductor.
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