| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which realizes highly precise electric characteristic modulation without suppressing high integration, realizes the mounting of a mechanism circuit for automatically adjusting an element parameter by on-chip and correcting characteristic dispersion on any LSI, and realizes wholly new active LSI such as self-optimized LSI and self-adaptive LSI, which permit large element characteristic dispersion to a certain degree. SOLUTION: The semiconductor element can adjust the gain coefficient of a transistor by controlling the direction (angle) of an electric field with respect to a gate or a channel. It is preferable that the element has a first gate forming a channel area in a rectangle or parallelogram, and second gates forming channel areas which substantially include triangles between the channel area formed in the first gate and a source area and a drain area. Thus, it is preferable that all the channel areas including the channel area formed by the first gate and the channels formed by the second gates on both sides are substantially formed in the rectangles or the parallelograms.
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