| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a heavy bonding wire and a semiconductor chip not mechanically damaged, and has improved junction between the bonding wire and the semiconductor chip, and to provide a manufacturing method of the semiconductor device. SOLUTION: The thickness of an electrode film 7 of the semiconductor chip 100 is made 3.5-10 μm, thus preventing cracks in an interlayer insulating film 6 and an n semiconductor substrate 1 for ultrasonic bonding even if the diameter of the bonding wire (aluminum wire 12) is increased to 300 μm or larger. |
