| 发明名称 |
METHOD FOR MANUFACTURING GROUP III NITRIDE FILM, GROUND FILM FOR MANUFACTURING GROUP III NITRIDE FILM AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film of low dislocation by using an easy method. SOLUTION: A ground film which has an uneven surface wherein ratio of a flatness part is <=50% and is composed of group III nitride containing Al of at least >=50 at.% is formed on a prescribed substrate. Continuously, an objective group III nitride film is formed on the ground film by using a usual MOCVD method. |
| 申请公布号 |
JP2002222771(A) |
申请公布日期 |
2002.08.09 |
| 申请号 |
JP20010314662 |
申请日期 |
2001.10.12 |
| 申请人 |
NGK INSULATORS LTD |
发明人 |
ASAI KEIICHIRO;SHIBATA TOMOHIKO;NAKAMURA YUKINORI;TANAKA MITSUHIRO |
| 分类号 |
C23C16/02;C23C16/30;C30B25/18;H01L21/20;H01L21/205;H01L33/12;H01L33/16;H01L33/22;H01L33/32 |
主分类号 |
C23C16/02 |
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