| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which a high speed FET can be realized at a logic circuit section and high integration can be realized at an SRAM section. SOLUTION: A conductive film for gate electrode is formed on the surface of a semiconductor substrate. First and second gate mask patterns of first insulating material are formed, respectively, on the conductive film for gate electrode in first and second regions. A sidewall spacer of second insulating material having etching resistance different from that of the first insulating material is formed on the sidewall of the first and second gate mask patterns. The second region is covered with the mask pattern and the sidewall spacer on the sidewall of the first gate mask pattern is removed. Finally, the conductive film for gate electrode is etched to leave first and second gate electrodes, respectively, in the first and second regions. |
