| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve stability and reliability by preventing edge portions of gate oxides from being thin. CONSTITUTION: After isolation regions are defined by field oxides(21), a nitride oxide(220) is formed on a semiconductor substrate(20) having a first and a second region. By removing the nitride oxide in the first region, the surface of the semiconductor substrate(20) in the first region is exposed. An oxide(240) is formed on the entire surface of the resultant structure. Then, a semiconductor layer(250) is formed on the oxide(240). Gates(251) and gate oxides(241,242) are formed by patterning the semiconductor layer(250) and the oxide(240). Then, a tilt ion implantation is performed on the gates(251) and gate oxides(241,242) using an inert gas with a defined tilt angle, thereby forming defects at both sidewalls of the gates(251) and the gate oxides(241,242). At this time, an oxidation is performed on the ion implanted gates(251) and the gate oxide(241,242), thereby compensating the ion implanted gates(251) and the gate oxides(241,242) for the defected portions.
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