| 摘要 |
PURPOSE: To provide a semiconductor device having a semiconductor element which is capable of reducing manufacturing costs by simplifying manufacturing processes and which is capable of controlling high voltage current. CONSTITUTION: In a semiconductor device comprising a first and second semiconductor element, the first semiconductor element includes lower electrodes 13ba, 13bb, 13bc, 13bd, 13ab, 13cb that are formed on a substrate 1, an intermediate insulating film 15 that is formed on the lower electrodes, and upper part electrodes 16a to 16d that are formed on the insulating film 15. The second semiconductor elements 26, 27 are formed on the substrate 1 and include a gate insulating film 15 composed of the same layer as the intermediate insulating film 15 and gate electrodes 16e, 16f that are formed on the gate insulating film 15.
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