| 摘要 |
PROBLEM TO BE SOLVED: To realize a thin film transistor device having a high mobility by providing a technique for grain enlarging (pseudo-single crystal) a low temperature poly-Si thin film as an element material of the thin film transistor device in a state in which the thin film is aligned in an plane-orientation having an optimum lattice structure considering an interface distortion from a substrate and controlling a crystal position. SOLUTION: The thin film transistor device having the high mobility is realized by minimizing a distortion energy of the substrate interface by aiming at the fact that a plane 110} of a IV group crystal (any one selected from the group consisting of C, Si, Ge, Sn and Pb or a crystal made of a mixed crystal of them) has a lowest unmarried hand density, selecting the plane- orientation having a growing distance corresponding to a channel length, crystal growing, thereby grain enlarging and forming the channel with crystal grains controlled in the plane-orientation. |
