发明名称 WAFER DRYING METHOD
摘要 PURPOSE: A wafer drying method is provided to easily remove a deionized water or a moisture on a surface of a wafer due to a fluid treatment and a wet processing by using a polar organic solvent vapor. CONSTITUTION: A wafer(40) is firstly rinsed in a rinse zone(22) by a deionized water(50) supplied from a flow deionized water supply(30). By raising the wafer(40) to a deionized water surface, the deionized water is exhausted through an overflow unit(23) and the second rinse is performed on the wafer(40) by one way stream through a one way stream module(25). A substitution/drying zone substitutes a polar organic solvent vapor for the deionized water(50) and a moisture on the surface of the wafer(40). The wafer(40) is dried by removing the adsorbed polar organic solvent vapor on the wafer(40) using only an inert carrier gas supplied from a spray zone(10).
申请公布号 KR20020064480(A) 申请公布日期 2002.08.09
申请号 KR20010004971 申请日期 2001.02.01
申请人 APET CO., LTD. 发明人 AHN, JONG PAL;KIM, DAE HUI;KIM, DEOK HO;KIM, GYEONG JIN
分类号 F26B9/06;F26B21/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 F26B9/06
代理机构 代理人
主权项
地址