发明名称 |
WAFER DRYING METHOD |
摘要 |
PURPOSE: A wafer drying method is provided to easily remove a deionized water or a moisture on a surface of a wafer due to a fluid treatment and a wet processing by using a polar organic solvent vapor. CONSTITUTION: A wafer(40) is firstly rinsed in a rinse zone(22) by a deionized water(50) supplied from a flow deionized water supply(30). By raising the wafer(40) to a deionized water surface, the deionized water is exhausted through an overflow unit(23) and the second rinse is performed on the wafer(40) by one way stream through a one way stream module(25). A substitution/drying zone substitutes a polar organic solvent vapor for the deionized water(50) and a moisture on the surface of the wafer(40). The wafer(40) is dried by removing the adsorbed polar organic solvent vapor on the wafer(40) using only an inert carrier gas supplied from a spray zone(10).
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申请公布号 |
KR20020064480(A) |
申请公布日期 |
2002.08.09 |
申请号 |
KR20010004971 |
申请日期 |
2001.02.01 |
申请人 |
APET CO., LTD. |
发明人 |
AHN, JONG PAL;KIM, DAE HUI;KIM, DEOK HO;KIM, GYEONG JIN |
分类号 |
F26B9/06;F26B21/14;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
F26B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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