| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can reduce a shock or damage to a ridge participating in a light emitting operation. SOLUTION: The semiconductor light emitting element is provided with ridges (8a, 9a) formed on the surface of a p-type etching stop layer 7, and dummy ridges (8b, 9b) which are formed by keeping a prescribed interval from the ridges (8a, 9a) and which comprise a side edge (side-face upper end) in the longitudinal direction not parallel to the side edge (side-face upper end) in the longitudinal direction of the ridges (8a, 9a).
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