PHOTO-ELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To improve a reduction in an output saturated current due to non- uniform generation of a self-bias effect of UTC-PD. SOLUTION: A pn junction diode is constituted by a p-type diffusion block layer 11 obtained by sequentially laminating; a p-type light absorption layer 12 having smaller light absorption end energy than the p-type diffusion block layer 11; a low concentration n-type carrier traveling layer 13 having greater light absorption end energy than the p-type light absorption layer 12; and an n-type contact layer 14 having greater light absorption end energy than the p-type light absorption layer 12. The p-type diffusion block layer 11 of the pn junction diode is connected to a p-type metal electrode 15, and the n-type contact layer 14 is connected to an n-type metal electrode 16, and impurity concentration of the p-type light absorption layer 12 has an in-plane distribution 1 which is getting lower from a center to a peripheral part.