发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can form a coating with uniform film thickness and film quality all over a substrate, by uniformly feeding process gas all over the target, along with eliminating an effect of gas components discharged from an organic substance coated on the surface of a color filter substrate. SOLUTION: The sputtering apparatus 1 sputters a target 8 by ions in plasma using a magnetron sputtering method, to form an ITO film originated from the target 8 on a glass substrate 5 attached to a rotating carrousel 4. The sputtering apparatus comprises manifolds 9 and 10, which have symmetrical configurations with respect to each orthogonal center axis inside the face of the target 8, and are arranged to surround the circumference of the target 8, and comprises openings 9a and 10a for feeding process gas, which are dispersively arranged in the whole manifolds 9 and 10 in order to feed process gas to the target 8.
申请公布号 JP2002220662(A) 申请公布日期 2002.08.09
申请号 JP20010020125 申请日期 2001.01.29
申请人 NIPPON SHEET GLASS CO LTD 发明人 SAKO HIROAKI
分类号 G02F1/13;C23C14/34;(IPC1-7):C23C14/34 主分类号 G02F1/13
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