MEASUREMENT METHOD OF INSIDE SURFACE OF HOLE

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring the distribution of a deposition film adhering to the inner surface of a contact hole having an aperture in deep submicron order. SOLUTION: A secondary ion 20 is generated by applying a primary ion 18 to the surface 12a of an insulating film 12 where the contact hole 14 is formed. The primary ion is applied to the surface of the insulating film from the same oblique direction. The mass spectrometry of the generated secondary ion is made, thus detecting the composition distribution of a deposition film 16 formed on the inner surface of the contact hole, and hence obtaining the composition distribution of the deposition film along the depth direction of the contact hole.