| 摘要 |
PROBLEM TO BE SOLVED: To prevent the damage of a photodetecting face of a CCD element when a temperature is low. SOLUTION: A back irradiating semiconductor device is provided with a planar semiconductor detecting element 10 which has sensitivity in an energy line irradiating the back and is constituted in such a way that the inner side of a peripheral edge is thinned from the back, a circular protection frame 20 supporting the peripheral edge in a state where a prescribed interval is given to the outside of the peripheral edge of the semiconductor detection element 10, a connection member 50 which electrically connects an electrode formed on the surface of the semiconductor detection element 10 and a wiring part formed in the protection frame 20, an epoxy resin 30 which is packed in the interval between the surface side of the semiconductor detection element 10 and the outer side of the peripheral edge and coats the surface of the semiconductor detection element 10 and the connection member 50, silicon resin 32 which is packed from above epoxy resin 30 and whose elasticity after curing is higher than epoxy resin 30, and a protecting cover 40 which is closely stuck to and installed on the upper face of silicon resin 32.
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