| 摘要 |
PROBLEM TO BE SOLVED: To reduce sensitivity dispersion of a sensor caused by dispersion of the capacitance between a movable electrode and fixed electrodes. SOLUTION: A cavity 2 and grooves 4a, 4b are formed on a silicon substrate 1, and the cavity 2 is extended in the transverse direction and the grooves 4a, 4b are extended in the longitudinal direction. A base plate part 3, a square frame part 4, a beam structure 6 having the movable electrode, and the fixed electrodes 16b, 22b arranged oppositely to the movable electrode of the beam structure 6 are sectionally formed by the cavity 2 and the grooves 4a, 4b. Impurity diffusion layers 60 are formed at least on side walls of the movable electrode and the fixed electrodes 16b, 22b, and the impurity for suppressing substrate etching for forming the cavity 2 is added thereto. |
