发明名称 PROTECTIVE DEVICE FOR PARALLEL-CONNECTED MOSFET
摘要 PROBLEM TO BE SOLVED: To provide a protective device for MOSFET's connected in parallel which detects faulty one, if any, of elements connected in parallel by detecting the potential of a gate control signal of any one of the elements connected in parallel and the potential of the drain electrode thereof. SOLUTION: Any one of the MOSFET's connected in parallel is provided with an element anomaly detector which detects the drain potential thereof relative to the source potential thereof and a control signal to report an element anomaly, if any. The control signal is applied to the gate electrode of any one of the MOSFET's connected in parallel, and the element anomaly detector is so designed to report as anomaly when both the potentials detected by the detector are high.
申请公布号 JP2002222920(A) 申请公布日期 2002.08.09
申请号 JP20010015865 申请日期 2001.01.24
申请人 MITSUBISHI HEAVY IND LTD 发明人 KOBAYASHI SHINICHI;ONUMA HITOSHI;NAKANO KOUJI;MORIMOTO MASAYUKI
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L27/088;H01L29/78;H02M1/00;H02M7/48;H02M7/5387;H03K17/08;H03K17/695 主分类号 H01L27/04
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