SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To increase in a leaping way the capacitance of the capacitor of a semiconductor device which has an MIM structure, and to improve the reliability of the semiconductor device. SOLUTION: The manufacturing method of the semiconductor device has a process (b) for forming an amorphous silicon film 11 on the surface of a lower electrode 110 of its capacitor; a process (c) for so roughening the surface of the silicon film 11 as to form a rough-surface polysilicon 12; and a process (d) for roughening the surface of the lower electrode 110 by etching the metal of the lower electrode 110, while using as a mask the rough-surface polysilicon 12. The surface of the lower electrode 110 of its capacitor having an MIM(metal-insulation film-metal) structure is so made rough (irregular) by the foregoing processes as to increase the area of the surface of its capacitor and to make possible the formation of the large-capacitance capacitor having the MIM structure.