| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device constituting a capacitive element of high capacitance without increase in the area of the element and with increase in the manufacturing cost thereof suppressed. SOLUTION: The semiconductor device constituting the capacitive element is obtained by forming on a semiconductor substrate an impurity diffusion layer that functions as first electrode, a dielectric film, and a wiring layer that functions as second electrode. For this purpose, a manufacturing method for the semiconductor device is provided which includes a process, in which trenches for element isolation and trenches formed in a desired pattern in a region where the capacitive element is to be formed are simultaneously formed on the semiconductor substrate; a process in which an oxide film is formed on the surfaces of the trenches and the oxide film is removed; a process in which the region on the semiconductor substrate, where the capacitive element is to be formed, is doped with impurities to form the impurity diffusion layer there; a process in which the dielectric film is formed on the impurity diffusion layer; and a process in which the wiring layer is formed on the dielectric film.
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