METHOD FOR FORMING CONTACT ELECTRODE OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to form the contact electrode of a semiconductor element easily in a state of low contact resistance. SOLUTION: First and second insulation films 11 and 12 are formed with different etching rates on the surface of a semiconductor substrate 10. A first hole 14 is made in the second insulation film 12 utilizing the difference of etching rate. The first hole 14 is deformed into a funnelform hole 14a by heating the second insulation film 12. A second hole 15 continuous to the funnelform hole 14a is made by etching the first insulation film 11 to expose the surface of the semiconductor substrate 10. An electrode 17 having a good step coverage is formed at a contact opening 16 defined by the funnelform hole 14a and the second hole 15.