| 摘要 |
PROBLEM TO BE SOLVED: To provide a matching circuit where an output of a high frequency circuit is not decreased, the efficiency is not deteriorated, noise is not increased, and fluctuations in a frequency band or the like are not caused even on the occurrence of fluctuations in an MIM(Mtal-Insulator-Metal) insulation film thickness L around a transistor(TR) due to manufacturing tolerance and the electric characteristic of the TR is not fluctuated in every product and to provide a semiconductor device employing the matching circuit. SOLUTION: An MIM capacitor C1 having inverse fluctuations to those of the MIM insulation film thickness L is inserted to input of the TR to combine the capacitor C1 with an input capacitor of the TR so as to automatically absorb the fluctuations in the MIM insulation film thickness L. That is, the matching circuit is realized, where the fluctuations in the electric characteristic of the TR due to the fluctuations in the MIM insulation film thickness L around the TR caused by manufacturing tolerance are automatically absorbed. Furthermore, attaching a bias circuit to the matching circuit can obtain the high frequency circuit that is stable over a broadband.
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