发明名称 METHOD FOR EVALUATING CONTACT HOLE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for evaluating an evaporated film adhered on the inside of a contact hole having a diameter of deep sub-micron order. SOLUTION: By injecting primary ions 18 to the surface 12a of an insulating film 12 in which a contact hole 14 is formed, secondary ions 20 are generated. The primary ions are injected in the same oblique direction with respect to the surface of the insulating film. By analyzing the generated secondary ions by mass spectrometry, composition distribution of the evaporated film 16 formed on the inside surface of the contact hole is detected. Therefore, composition distribution in the depthwise direction of the contact hole is obtained.</p>
申请公布号 JP2002222843(A) 申请公布日期 2002.08.09
申请号 JP20010344343 申请日期 2001.11.09
申请人 OKI ELECTRIC IND CO LTD 发明人 RIYUU KOKURIN;UCHIDA EIJI;AIKAWA IZUMI;IKEGAMI NAOKATSU;HIRASHITA NORIO
分类号 G01N23/225;H01L21/28;H01L21/302;H01L21/3065;H01L21/66;H01L21/768;H01L23/522;(IPC1-7):H01L21/66 主分类号 G01N23/225
代理机构 代理人
主权项
地址