| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photoelectric converter capable of realizing a long term reliability even when the converter has a photoelectric conversion layer made of an amorphous semiconductor film containing Cl so as to improve a photoelectric conversion efficiency after a photodegradation. SOLUTION: The photoelectric converter comprises a translucent electrode (SnO2 film) 2, the photoelectric conversion layer 3, a ZnO film 4 and a back surface electrode (Ag film) 5 sequentially laminated in this order on a glass board 1. The layer 3 is constituted of a laminate of a p-type amorphous Si film 3, a first i-type amorphous Si film 3b, a second i-type amorphous Si film 3c and an n-type amorphous Si film 3d. The film 3b is formed of SiH2Cl2 and H2 as material gases. The film 3c is formed of SiH4 and H2 as material gases. A diffusion of the Cl contained in the film 3b in the electrode 5 is suppressed by the film 3c.</p> |
