| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein its miniaturization and increase of integration density are made possible, and deterioration of circuit characteristic can be suppressed, and further, the degree in freedom of wiring design can be increased. SOLUTION: The semiconductor device 1 has a chip-core region 18 and an I/O region 11 on a semiconductor substrate 10. In the chip-core region 18, a great number of circuits 20 are arranged. In the I/O region 11, there is provided an annular wiring 60 having a laminated structure which includes an upper layer 61 corresponding to a first potential and a lower layer 62 corresponding to a second potential. The upper and lower layers 61, 62 of the annular wiring 60 are so connected respectively with the circuits 20 via first and second connection lines 16, 17 as to feed thereby powers to the circuits 20. |
