METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING PLUG

摘要

PURPOSE: A formation method of semiconductor devices having a plug is provided to prevent an incomplete filling of a via hole when forming a plug without increase of a parasitic capacitance. CONSTITUTION: After forming metal interconnections(210) having irregular intervals on a semiconductor substrate(200), a fluidity oxide(225) is deposited on the entire surface of the resultant structure. Then, the fluidity oxide(225) is performed with an entire etch-back so as to expose the upper surface of the metal interconnections(210). After depositing an interlayer dielectric material on the resultant structure, an interlayer dielectric(230) is formed by performing a CMP(Chemical Mechanical Polishing). After forming a via hole to expose the upper surface of the metal interconnection(210) by selectively etching the interlayer dielectric(230), an out-diffusion is performed to remove moisture in the fluidity oxide(225) by annealing the resultant structure, thereby forming a plug(240) without voids.