发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To realize a further lower temperature process (600 deg.C or lower) by reducing the number of times of heat treating at a high temperature and to realize a simplification of steps and an improvement in a throughput. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an impurity region 18 in which a rare gas element (also called rare gas) is added by using a mask 17 for a semiconductor film having a crystal structure, gettering to segregate a metal element contained in the semiconductor film to the impurity region 18 by heat treating, and then forming a source region or a drain region of the impurity region 18.
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申请公布号 |
JP2002222958(A) |
申请公布日期 |
2002.08.09 |
申请号 |
JP20010019337 |
申请日期 |
2001.01.29 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;NAKAMURA OSAMU |
分类号 |
H01L21/20;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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