| 摘要 |
<p>A plurality of substantially parallel grooves (2) are made in the first major surface (24a) of a semiconductor single crystal substrate (24) and a metal electrode (6) for taking out the output is provided in an electrode forming region, i.e. the inner side face on one side in the widthwise direction of each groove (2). After an underlying layer (49) containing metal is formed in the electrode forming region, an electrode body metal layer (50) including at least any one of an electroless plating layer, an electrolytic plating layer or a hot-dip plating layer is formed on the underlying layer (49) containing metal.</p> |
